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Light Emitting Diode(InGaN)
KLB-16B
DIMENSIONS KLB-16B is a high bright InGaN blue LED, and has the optimized optical characteristics.
Features
* Ultra Wide Viewing Angle * Very Thin Small SMD Package
Applications
* Display * Indicator * Key Pad Back Light
Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Operating temperature Storage temperature Soldering Temperature
*2. Soldering time 5 Sec
*2 *1
[ Ta=25C ]
Symbol VR IF IFP PD Topr. Tstg. Tsol.
Ratings 5 20 70 70 -20 ~ +85 -30 ~ +100 260
Unit V mA mA mW C C C
*1. IFP Measured under duty 1/10 @ 1KHz
Electro-Optical Characteristics Parameter Forward voltage Luminous Intensity Doninant Wave Length Spectral half bandwidth Half angle
[ Ta=25C ]
Symbol VF Iv d
Conditions IF = 5 mA IF = 10 mA IF = 5 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA
Min 20 35 465 -
Typ 2.9 3.0 35 60 25 160
Max 3.4 3.6 478 -
Unit V mcd nm nm deg.
1/2
Light Emitting Diode(InGaN)
KLB-16B
Forward current vs. Ambient temperature
(IF) 25
Radiant Intensity vs. Forward current
1.5
Forward current IF(mA)
20
Relative intensity
1
15 10 5 0 () 100
0.5
0
0
20
40
60
80
0
3
5
10
15
20
25
(IF) 30
Ambient temperature Ta
Forward current IF
Relative radiant intensity vs. Ambient temperature
0.06 Relative radiant intensity PO 0.05 Intensity [arb.]
10
Relative intensity vs. Wavelength
0.04 0.03 0.02 0.01
1
0.1
-20
0
20
40
60
80
100 ()
0 350
400
450
500
550
600
Ambient temperature Ta
Wave Length[nm]
Forward current vs. Forward voltage
) 30
Forward current IF
Radiant Pattern
Angle(deg)
Y
+4
+6 0
25 20 15 10
0
+20
0
X -20
-4
0
Y X
-6
50
0
-80 -100
5
+ 80
+1 0 0
0
100
0
0
(V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward voltage VF
50
50
100
Relative intensity(%)
2/2

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